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Your assignment is to prepare and submit a paper on the major advantage of series-mounted diode.

Your assignment is to prepare and submit a paper on the major advantage of series-mounted diode. The most common and simplest configuration of the rectangle is a single series mounted diode (D1) topology as shown in figure 3. The configuration structure is based on a single diode connected in series with RF signal source. The series mounted diode acts as a half-wave rectifier. During negative half as D1 blocks the input sine wave, at this occasion, the input filter is charged. Through the positive half-wave, D1 is in conduction mode and allows energy to move from the source to the input filter towards the output filter, which will, in turn, block the high-frequency harmonics from reaching the load. The major advantage of the series mounted diode is that it minimizes diode loss, which is proportional to the diode junction resistance. The single series mounted diode rectenna topology is normally dedicated to low power levels (below 0 dBm), where the capability of power handling can be traded with high sensitivity. It is important to note that rectenna circuits’ behavior is non-linear in single series diode mounted topology due to the diode rectification behavior. Practically it is not possible to design sub-parts independently namely due to their mutual interaction and dependency among each other. The load of the input filter highly depends on the diode and the output filter at the diode extremity. Global circuit optimization is used for dimensioning the passive component of filter elements. The efficiency for single series diode mounted rectenna topology is usually measured with respect to the rectenna load at -5 dBm of power input. Maximum efficiency is obtained for 2.4 kΩ when the output voltage is 620mV. The process can be indicated in figures 4 and 5. The graphical representation is given in figure 4 and 5 show single series-mounted diode rectenna traces the evolution of RF-DC energy conversion efficiency as a function of the incident RF power level.

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